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EV KIT AVAILABLE
DS28DG02
2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
www.maxim-ic.com
GENERAL DESCRIPTION
The DS28DG02 combines 2kb (256 x 8) EEPROM with 12 PIO lines, a real-time clock (RTC) and calendar with alarm function, a CPU reset monitor, a battery monitor, and a watchdog. Communication with the device is accomplished with an industrystandard SPITM interface. The user EEPROM is organized as four blocks of 64 bytes each with single-byte and up to 16-byte page write capability. Additional registers provide access to PIOs and to setup functions. Individual PIO lines can be configured as inputs or outputs. The power-on state of PIOs programmed as outputs is stored in nonvolatile (NV) memory. All PIOs may be reconfigured by the user through the serial interface. The RTC/calendar operates in the 12/24-hour format and automatically corrects for leap years. Battery monitor threshold and watchdog timeout are userprogrammable through NV registers. The reset monitor generates a reset to the CPU if the voltage at the VCC pin falls below the factory-set limit. The reset output includes a debounce circuit for manual pushbutton reset.
FEATURES
2kb (256 x 8) EEPROM Organized in Four 64-Byte Blocks Single Byte and Up to 16-Byte EEPROM Write Sequences EEPROM Write-Protect Control Pin Protects 1, 2, or All 4 Blocks Endurance 200k Cycles per Page at +25C; 10ms (max) EEPROM Write Cycle SPI Serial Interface Supporting Modes (0,0) and (1,1) at Up to 2MHz Clock Frequency 12 PIO Lines with LED Drive Capability Each PIO is Configured to Input or Output, Open-Drain/Push-Pull on Startup by Stored Value All PIOs are Reconfigurable After Startup RTC/Calendar/Alarm with BCD Format and Leap-Year Compensation RTC Controlled Through 32.768kHz, 12.5pF Crystal or External TCXO CPU Reset Through Fast-Response Precision VCC Monitor with Hysteresis or Pushbutton Battery Monitor 2.5V, 2.25V, 2.0V, 1.75V, -5% Watchdog Timer 1.6s, 0.8s, 0.4s, 0.2s (typ) Unique Factory-Programmed 64-Bit Device Registration Number Operating Range: 2.2V to 5.25V, -40C to +85C 4kV IEC 1000-4-2 ESD Protection Level (Except Crystal Pins) Available in 28-Lead, 4.4mm TSSOP or 36-Lead 6mm x 6mm QFN Package
APPLICATIONS
Asset-Tracking Systems Broadband Access Network Equipment Patient-Monitoring Systems Home Lighting Control Systems Holter Heart Monitors Typical Operating Circuit appears on page 32. Pin Configuration appears on page 33.
ORDERING INFORMATION
PART DS28DG02E-3C+ DS28DG02E-3C+T DS28DG02G-3C+ DS28DG02G-3C+T TEMP RANGE -40C to +85C -40C to +85C -40C to +85C -40C to +85C VCC TRIP 3.3V -5% 3.3V -5% 3.3V -5% 3.3V -5% PIN-PACKAGE 28 TSSOP-EP* (4.4mm) 28 TSSOP-EP* T&R 36 TQFN-EP* (6mm x 6mm) 36 TQFN-EP* T&R PKG CODE U28E+5 U28E+5 T3666+3 T3666+3
*EP = Exposed Paddle. + Denotes lead-free/RoHS compliant device. For additional VCC monitor trip points or other device options, contact the factory. Note: Registers are capitalized for clarity. SPI is a trademark of Motorola, Inc.
Note: Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device may be simultaneously available through various sales channels. For information about device errata, click here: www.maxim-ic.com/errata.
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REV: 061907
DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground Maximum Current SO, ALMZ, RSTZ, WDOZ Pins Maximum Current Each PIO Pin Maximum GND and VCC Current Operating Temperature Range Junction Temperature Storage Temperature Range Soldering Temperature -0.5V, +6V 20mA 50mA 270mA -40C to +85C +150C -55C to +125C See IPC/JEDEC J-STD-020
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to the absolute maximum rating conditions for extended periods may affect device.
ELECTRICAL CHARACTERISTICS
(TA = -40C to +85C.) PARAMETER Supply Voltage Battery Voltage Battery Current (VBAT = 3.0V, Note 1) Standby Current (Note 2) SYMBOL VCC VBAT IBAT CONDITIONS Battery monitor off Battery monitor enabled (Note 1) RTC oscillator off RTC oscillator on RTC oscillator on, +25C SPI idle, ALMZ, WDOZ, RTSZ high, VCC = 5.25V, RTC oscillator on, all PIOs grounded Reading EEPROM at 2 Mbps, ALMZ, WDOZ, RTSZ high, VCC = 5.25V, RTC oscillator on, all PIOs grounded VCC = 5.25V (Note 3) +25C -40C to +85C MIN 2.2 2.7 1.5 TYP MAX 5.25 5.25 VCC 2 10 4.7 100 UNITS V V A
3.0 0.4
ICCS
60
A
Operating Current Programming Current VCC Monitor Trip Point VCC Monitor Trip-Point Tolerance VCC Monitor Hysteresis Power-Up Wait Time EEPROM Programming Time Endurance Data Retention REAL-TIME CLOCK Frequency Deviation PIO PINS (See Figures 21, 22, 23) LOW-Level Output Current at VOL = 0.5V (Note 8) HIGH-Level Output Current (Note 8)
ICCA IPROG VTRIP VTRIPTOL VHYST tPOIP tPROG NCYCLE tRET F
550 600 3.05
800 1000 3.14 +1.5 +2.5 0.6 60 10
A A V %VTRIP %VTRIP s ms -- years PPM
2.97 -1.5 -2.5 0.4
0.5
At +25C (Notes 4, 5) At +85C (Notes 5, 6) (Notes 5, 7) VCC = 2.2V VCC = 3.3V VCC = 5.25V VOH = 2.4V, VCC = 3.3V VOH = 4.5V, VCC = 5.25V
200k 40 -46 6 12.5 19 6.5 12.5 9.5 22.0 30 11.0 18.0 +46
IOL IOH
mA mA
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog PARAMETER LOW-Level Input Voltage HIGH-Level Input Voltage Output Transition Time Power-On Setting Time PIO Read Setup Time PIO Read Hold Time Leakage Current SYMBOL VIL VIH tOT tPOS tPS tPH IL Low-current mode (Note 9) High-current mode (Note 10) High-current mode (Note 11) (Note 5) (Note 5) High impedance, at VCCMAX At 4mA sink current -1 (Notes 5, 13) 176 1 (Note 14) VCC falling below VTRIP (Note 15) At 4mA sink current 328 VIL tRST 90 0.3 0.3 x VCC VCC + 0.5V +1 1.64 0.82 0.41 0.20 2.66 1.33 0.67 0.33 0.3 x VCC VCC + 0.5V +1 0.2 0.7 x VCC -1 +1 0.7 x VCC CONDITIONS MIN TYP MAX 0.8 VCC + 0.5V 1 s 25 25 100 100 -1 +1 0.3 0.3 x VCC +1 2.13 532 s ns ns A V V A V ms s V ms s V V V A s s UNITS V V
RSTZ PIN (Note 12) (See Figures 6, 7) LOW-Level Output Voltage VOL LOW-Level Input Voltage Input Leakage Current Minimum VCC for Valid RSTZ RSTZ Pulse Duration Manual Reset Pulse Width Manual Reset Release Threshold Manual Reset Debounce Time RSTZ Delay ALMZ, WDOZ PINS LOW-Level Output Voltage WDI PIN LOW-Level Input Voltage HIGH-Level Input Voltage Input Leakage Current Minimum Input Pulse Width Watchdog Timeout WPZ, SI, SCK, CSZ PINS LOW-Level Input Voltage HIGH-Level Input Voltage Input Leakage Current SO PIN LOW-Level Output Voltage HIGH-Level Output Voltage Output Leakage Current VOL VOH IL VIL VIH IL VIL VIH IL tMPW tWD VIL IL VPOR tRST tMPW VTRMS tDEB tDEL VOL
User programmable
0.7 x VCC -1 1 0.88 0.44 0.22 0.11
V V A V V A
0.7 x VCC -1 At 1mA sink current and VCCmin At 1mA source current High impedance, at VCCmax 3 of 33
DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog PARAMETER SYMBOL CONDITIONS MIN 2.25 2.03 1.80 1.58 -1.5 -2.5 7.5 TYP 2.31 2.08 1.85 1.62 MAX 2.38 2.14 1.90 1.66 +1.5 +2.5 20 UNITS
BATTERY MONITOR (See Figure 8) VBAT Trip Point VBAT Monitor Trip-Point Tolerance Battery Test Load Current Battery Test Duration VBTP VTRIPTOL ILOAD tBTPW Load applied to battery (Notes 5, 16) (Note 5) (Note 5) Normal communication (Note 17) (Note 5) (Note 5) (Note 5) (Note 5) (Note 5) 0.4 0.4 0.25 2.0 0.25 2 50 50 0 1 1 120 Measured with VBAT falling; trip point is user programmable +25C -40C to +85C V %VBTP A s s s s s MHz ns ns s s ns
2
SPI INTERFACE TIMING (See Figures 9, 10) CSZ Setup Time tCSS CSZ Hold Time tCSH CSZ Standby Pulse Width tCPH (Note 5) CSZ to High-Z at SO tCHZ SCK Clock Frequency fCLK Data Setup Time tDS Data Hold Time tDH SCK Rise Time tSCKR SCK Fall Time tSCKF Output Valid time tV
Note 1: Note 2: Note 3: Note 4: Note 5: Note 6:
Note 7: Note 8:
Note 9:
Note 10: Note 11: Note 12: Note 13: Note 14: Note 15:
Note 16: Note 17:
If no battery is used, connect the VBAT pin to VCC. The RTC is powered by VBAT if VCC falls below VCCmin. To the first order, this current is independent of the supply voltage value. Nominal values: 3.3V -5%, set at factory. Measured with VCC falling; for VCC rising, the actual threshold is VTRIP + VHYST. This specification is valid for each 16-byte memory page. Not production tested. Either guaranteed by design (GBD) or guaranteed by a reliability study (EEPROM lifetime parameters). EEPROM writes can become nonfunctional after the data-retention time is exceeded. Long-time storage at elevated temperatures is not recommended; the device can lose its write capability after 10 years at +125C or 40 years at +85C. Valid with 32KHz crystal, 12.5pF, ESR 45k, +25C. Total PIO sink and source currents through all PIO pins must be externally limited to less than the absolute maximum rating of 270mA minus 1.5mA for EEPROM programming and SPI communication. Exceeding the absolute maximum rating can cause damage. Assumes the configuration of the system and the part is such that changing GOV (0 i 11) between `b1 and `b0 switches between sourcing no current and sinking the absolute maximum current at the PIO pin. The limit refers to the switching time between sinking 20% of the DC current and 80% of the DC current. The same is true for changing between 'b0 and 'b1 causing the part to switch from sinking no current to sourcing the absolute maximum current at the PIO pin. Each output pin transitions in 1s with a pause of 1s before the next pin transitions. All PIO are tri-stated at beginning of reset prior to setting to power-on values. If the part has battery power (normal case) the active pulldown of RSTZ is supported by the battery. If VBAT is tied to VCC (no battery supply) the state of the RSTZ pulldown transistor is not guaranteed when VCC falls below VPOR. Threshold refers to the manual reset function obtained by forcing RSTZ low. Transient response to a step on VCC from above VTRIP down to (VTRIP - 1mV). Glitches on VCC that are shorter than tDELmin are guaranteed to be suppressed, regardless of their amplitude. Glitches on VCC that are longer than tDELmax are guaranteed not to be suppressed. This parameter is tested at high VCC and guaranteed by design at low. If enabled, this test takes place every hour on the hour. The battery voltage is compared to VBTP during the second half of the tBTPW window. The timing is controlled by the RTC. Extended duration applies to the following cases: 1) Aborted WREN, WRDI, RDSR, and WRSR command. 2) WRITE command aborted before transmitting the first complete data byte after command and address. 3) READ command aborted before reading the first complete data byte after command and address. 4) Read aborted before the end of a byte.
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
PIN DESCRIPTION
NAME X1 X2 RSTZ WDI WDOZ WPZ PIO0 PIO4 PIO8 GND PIO10 PIO6 PIO2 VCC PIO3 PIO7 PIO11 PIO9 PIO5 PIO1 ALMZ SO SI SCK CSZ VBAT N.C. GND PIN TSSOP28 TQFN36 1 33 2 34 3 4 5 6 7 8 9 10, 19 11 12 13 14, 15 16 17 18 20 21 22 23 24 25 26 27 28 -- EP 36 2 3 4 5 6 7 9, 19 10 11 12 13, 15 16 17 18 21 22 23 24 25 26 28 30 31 1, 8, 14, 20, 27, 29, 32, 35 EP FUNCTION 32.768kHz Crystal Connection 1 or 32.768kHz Input from TCXO 32.768kHz Crystal Connection 2 Open-Drain Output Pin (Active Low) for VCC power-fail reset, watchdog alarm, and Manual Reset Input. See Multifunction Control/Setup Register description for more information. Watchdog Input Pin (Active High). See Multifunction Control/Setup Register description at address 134h for more information. Open-Drain Output Pin (Active Low) for (user-choice) watchdog alarm. See Multifunction Control/Setup Register description for more information. Hardware Write-Protect Input Pin (Active Low). See the SPI Interface description for more information. PIO Line #0 PIO Line #4 PIO Line #8 Ground Supply PIO Line #10 PIO Line #6 PIO Line #2 Power Supply Input PIO Line #3 PIO Line #7 PIO Line #11 PIO Line #9 PIO Line #5 PIO Line #1 Open-Drain Output Pin (Active Low) for RTC, battery monitor, and (user-choice) watchdog alarms. See the Multifunction Control/Setup Register description for more information. SPI Serial Data Output (tristate) SPI Serial Data Input SPI Serial Clock Input Chip Select Input (Active Low) Backup Battery Supply for RTC and RSTZ support. No Connection Exposed Paddle. Solder evenly to the board's ground plane for proper operation. See Application Note 3273 for additional information.
OVERVIEW
The DS28DG02 features 2kb of EEPROM, 12 bidirectional PIO channels, an RTC with calendar and alarm function, a watchdog timer, two voltage monitors with precision trip points, and three alarm/reset outputs. Each DS28DG02 has its own unique registration number, which serves as identification of the product the device is embedded in. All these resources are accessed through a serial SPI interface, as shown in the block diagram in Figure 1. The SPI interface automatically adjusts to SPI modes (0,0) and (1,1). The VCC trip point, which controls the power-fail reset output (RSTZ pin), is set at the factory. The user can set the battery monitor threshold and the watchdog time-out through software. The RTC uses the common BCD format for time, calendar and day of the week. The device can be programmed to generate an RTC alarm every second, minute, hour, or day and once a week or once a month at a user-defined time. RTC, watchdog, and battery alarm can be individually enabled.
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Figure 1. Block Diagram
WPZ CSZ SCK SI SO
SPI Communication Interface
Memory Function Buffer and Control
PIO Function Control
12 PIOn
64-bit Unique Registration Number
2kb EEPROM Array
2
WDI
Watchdog Timer
WDA
Voltage Monitors and Power Distribution
BATA VCLA
VCC 2 VBAT GND
X1 X2
Real-Time Clock, Calendar and RTC Alarm
CLKA
Alarm Control Logic, RSTZ Debounce
ALMZ WDOZ RSTZ
The PIO configuration and setup of RTC/calendar with alarm are part of the Detailed Register Description. This section also includes specifics of the Multifunction Control/Setup register, which enables/disables several device functions, and the Alarm/Status register. For detailed information on the operation of the VCC monitor/power-fail reset and the battery monitor see the Monitoring Functions section. The SPI Interface description explains the communication protocol for memory and register access and the use of the watchdog function. The PIO Read/Write Access section illustrates the behavior of the PIOs, in particular the address generation and timing in low- and high-current mode. The DS28DG02 memory map (Figure 2) begins with 256 bytes of general-purpose user EEPROM, organized as four blocks of 64 bytes. Additional EEPROM is set aside to store power-on defaults for PIO state (high, low, in output mode), data direction (in, out), read-inversion (true, false), port output type (push-pull, open-drain), and output mode (high current, low current). Once powered up, the PIO settings can be overwritten through SRAM registers without affecting the power-on defaults. PIO state, direction, and read-inversion can be set for individual ports. The output type is set for groups of four PIOs and the selected output mode applies to all PIOs in output mode. The RTC/calendar, associated Alarm registers and the Multifunction Control/Status registers are kept nonvolatile through battery backup. Write-protection, if enabled, is available for all four EEPROM blocks, blocks 2 and 3 only, or block 3 only and for all writeable registers from address 120h and higher.
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Figure 2. Memory Map
ADDRESS 000h to 03Fh 040h to 07Fh 080h to 0BFh 0C0h to 0FFh 100h to 109h 10Ah 10Bh 10Ch 10Dh 10Eh 10Fh 110h to 117h 118h to 11Fh 120h 121h 122h 123h 124h 125h 126h 127h 128h 129h to 12Fh 130h to 133h 134h 135h 136h and above TYPE EEPROM EEPROM EEPROM EEPROM -- EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM -- ROM SRAM SRAM SRAM SRAM SRAM SRAM -- -- -- NV SRAM NV SRAM NV SRAM NV SRAM -- ACCESS R/W R/W R/W R/W -- R/W R/W R/W R/W R/W R/W -- R R/W R/W R/W R/W R/W R/W R R -- R/W R/W R/W R/Clear -- User memory block 0. User memory block 1. User memory block 2. User memory block 3. Reserved, contents undefined. Power-on default for PIO output state (PIO0 to PIO7). Power-on default for PIO output state (PIO8 to PIO11). Power-on default for PIO direction (PIO0 to PIO7). Power-on default for PIO direction (PIO8 to PIO11). Power-on default for PIO read-inversion (PIO0 to PIO7). Power-on default for PIO read-inversion (PIO8 to PIO11), PIO output type (PIO0 to PIO11 in groups of 4 PIOs), PIO output mode (same mode for all PIOs). Reserved, contents is undefined. 64-bit unique registration number. PIO output state (PIO0 to PIO7). PIO output state (PIO8 to PIO11). PIO direction (PIO0 to PIO7). PIO direction (PIO8 to PIO11). PIO read-inversion (PIO0 to PIO7). PIO read-inversion (PIO8 to PIO11), PIO output type (PIO0 to PIO11 in groups of 4 PIOs), PIO output mode (same mode for all PIOs). PIO read access (PIO0 to PIO7). PIO read access (PIO8 to PIO11). Reserved, contents undefined. RTC and calendar. RTC alarm. Multifunction control/setup register. Alarm and status register. Reserved, contents undefined. DESCRIPTION
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
DETAILED REGISTER DESCRIPTIONS
Power-On Default for PIO Output State ADDR 10Ah 10Bh b7 POV7 X b6 POV6 X b5 POV5 X b4 POV4 X b3 POV3 POV11 b2 POV2 POV10 b1 POV1 POV9 b0 POV0 POV8
There is general read and write access to these addresses. Factory default: 10Ah: FFh; 10Bh: 0Fh. The contents of this register are automatically transferred to address 120h/121h when the device powers up. BIT DESCRIPTION POVn: PIO Power-On Default State X: (Not Assigned) BIT(S) -- -- DEFINITION Power-on default output state of PIO0 to PIO11. POV0 applies to PIO0, etc. Reserved for future use.
Power-On Default for PIO Direction ADDR 10Ch 10Dh b7 POD7 X b6 POD6 X b5 POD5 X b4 POD4 X b3 POD3 POD11 b2 POD2 POD10 b1 POD1 POD9 b0 POD0 POD8
There is general read and write access to these addresses. Factory default: 10Ch: FFh; 10Dh: 0Fh. The contents of this register are automatically transferred to address 122h/123h when the device powers up. BIT DESCRIPTION PODn: PIO Power-On Default Direction X: (Not Assigned) BIT(S) -- -- DEFINITION Power-on default direction of PIO0 to PIO11. POD0 applies to PIO0, etc. Legend: 0 output; 1 input Reserved for future use.
Power-On Default for PIO Read Inversion (PIO0 to PIO7) ADDR 10Eh b7 PIM7 b6 PIM6 b5 PIM5 b4 PIM4 b3 PIM3 b2 PIM2 b1 PIM1 b0 PIM0
There is general read and write access to this address. Factory default: 00h. The contents of this register are automatically transferred to address 124h when the device powers up. BIT DESCRIPTION PIMn: PIO Power-On Default Read-Inversion BIT(S) -- DEFINITION Power-on default state of the read-inversion bit of PIO0 to PIO7. PIM0 applies to PIO0, etc. Legend: 0 no inversion; 1 inversion
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog Power-On Default for PIO Read Inversion (PIO8 to PIO11), PIO Output Type and Output Mode ADDR 10Fh b7 POTM b6 POT3 b5 POT2 b4 POT1 b3 PIM11 b2 PIM10 b1 PIM9 b0 PIM8
There is general read and write access to this address. Factory default: 80h. The contents of this register are automatically transferred to address 125h when the device powers up. BIT DESCRIPTION PIMn: PIO Power-On Default Read-Inversion POT1: Power-On Default Output Type POT2: Power-On Default Output Type POT3: Power-On Default Output Type POTM: Power-On Default Output Mode BIT(S) b0 to b3 b4 b5 b6 b7 DEFINITION Power-on default state of the read-inversion bit of PIO8 to PIO11. PIM8 applies to PIO8, etc. Legend: 0 no inversion; 1 inversion Power-on default output type of PIO0 to PIO3; Legend: 0 push-pull; 1 open drain Power-on default output type of PIO4 to PIO7; Legend: 0 push-pull; 1 open drain Power-on default output type of PIO8 to PIO11; Legend: 0 push-pull; 1 open drain Power-on default output mode of PIO0 to PIO11; Legend: 0 low-current, simultaneous switching; 1 sequential switching high-current,
Unique Registration Number (118h to 11Fh) Each DS28DG02 has a unique registration number that is 64 bits long, as shown in Figure 3. The registration number begins with the family code at address 118h followed by the 48-bit serial number (LS-byte at the lower address) and ends at address 11Fh with the Cyclic Redundancy Check (CRC) of the first 56 bits. This CRC is generated using the a polynomial X8 + X5 + X4 + 1. Additional information about CRCs is available in Application Note 27.
Figure 3. 64-Bit Registration Number
MSB 8-Bit CRC Code MSB LSB MSB 48-Bit Serial Number LSB LSB 8-Bit Family Code (70h) MSB LSB
PIO Output State ADDR 120h 121h b7 OV7 X b6 OV6 X b5 OV5 X b4 OV4 X b3 OV3 OV11 b2 OV2 OV10 b1 OV1 OV9 b0 OV0 OV8
There is general read and write access to these addresses. These registers are automatically loaded with data from address 10Ah/10Bh when the device powers up. BIT DESCRIPTION OVn: PIO Output State X: (Not Assigned) BIT(S) -- -- DEFINITION Output state of PIO0 to PIO11. OV0 applies to PIO0, etc. Legend: 0 LOW; 1 HIGH if PIO direction is output Reserved for future use.
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog PIO Direction ADDR 122h 123h b7 DIR7 X b6 DIR6 X b5 DIR5 X b4 DIR4 X b3 DIR3 DIR11 b2 DIR2 DIR10 b1 DIR1 DIR9 b0 DIR0 DIR8
There is general read and write access to these addresses. These registers are automatically loaded with data from address 10Ch/10Dh when the device powers up. BIT DESCRIPTION DIRn: PIO Direction X: (Not Assigned) BIT(S) -- -- DEFINITION Direction of PIO0 to PIO11. DIR0 applies to PIO0, etc. Legend: 0 output; 1 input Reserved for future use.
PIO Read Inversion (PIO0 to PIO7) ADDR 124h b7 IMSK7 b6 IMSK6 b5 IMSK5 b4 IMSK4 b3 IMSK3 b2 IMSK2 b1 IMSK1 b0 IMSK0
There is general read and write access to this address. This register is automatically loaded with data from address 10Eh when the device powers up. BIT DESCRIPTION IMSKn: PIO ReadInversion BIT(S) -- DEFINITION Read-inversion bit of PIO0 to PIO7. IMSK0 applies to PIO0, etc. Legend: 0 no inversion; 1 inversion
PIO Read Inversion (PIO8 to PIO11), PIO Output Type and Output Mode ADDR 125h b7 OTM b6 OT3 b5 OT2 b4 OT1 b3
IMSK11
b2
IMSK10
b1 IMSK9
b0 IMSK8
There is general read and write access to this address. This register is automatically loaded with data from address 10Fh when the device powers up. BIT DESCRIPTION IMSKn: PIO ReadInversion OT1: Output Type OT2: Output Type OT3: Output Type OTM: Output Mode BIT(S) b0 to b3 b4 b5 b6 b7 DEFINITION Read-inversion bit of PIO8 to PIO11. PIM8 applies to PIO8, etc. Legend: 0 no inversion; 1 inversion Output type of PIO0 to PIO3; Legend: 0 push-pull; 1 Output type of PIO4 to PIO7; Legend: 0 push-pull; 1 Output type of PIO8 to PIO11; Legend: 0 push-pull; 1 open drain open drain open drain high-current,
Output mode of PIO0 to PIO11; Legend: 0 low-current, simultaneous switching; 1 sequential switching
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog PIO Read Access ADDR 126h 127h b7 IV7 0 b6 IV6 0 b5 IV5 0 b4 IV4 0 b3 IV3 IV11 b2 IV2 IV10 b1 IV1 IV9 b0 IV0 IV8
There is only read access to these addresses. Bits 4 to 7 of address 127h always read 0. Read access is functional for all PIOs, regardless of their direction setting. Reported is the logic state of the pin, which may be different from what the PIO output value register implies. BIT DESCRIPTION IVn: Input Value of PIOn BIT(S) -- DEFINITION Logic state read from PIO0 to PIO11 pins. IV0 applies to PIO0, etc. Legend: IVn = PIOn XOR'ed with IMSKn
Figure 4 shows a simplified schematic of a PIO. The flip flops are accessed through the PIO Output State (OVn) and Read Access (IVn) registers and memory addresses 122h to 125 (DIRn, IMSKn, OTn). They are initialized at power-up or during Refresh (see the SPI Interface Description) according to the data stored at memory addresses 10Ah to 10Fh. When a PIO is configured as input, the PIO output is tri-stated (high impedance). When a PIO is configured as output, the PIO input is the same as the output state XORed with the corresponding read inversion bit. The differences of the PIO behavior in low current and high current mode are explained in the PIO Read/Write Access section near the end of this document.
Figure 4. PIO Simplified Schematic
OTn OTn from SPI Interface D Q
CLK DIRn DIRn from SPI Interface D Q Vcc
CLK PIOn Pin OVn OVn from SPI Interface D Q
CLK
CLK IMSKn IMSKn from SPI Interface D Q IVn D Q to SPI Interface
CLK
CLK
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog RTC and Calendar Registers ADDR 129h 12Ah 12Bh 12Ch 12Dh 12Eh 12Fh b7 0 0 0 0 0 0 12/24 0 0 0 0 10 Years b6 b5 10 Seconds 10 Minutes 10hrs A/P 0 10 Date 10hrs 0 0 b4 b3 b2 b1 b0 Single Seconds Single Minutes Single Hours Day of Week Single Date Single Months Single Years
There is general read and write access to these addresses. Bits shown as 0 cannot be written to 1. The RTC and calendar registers are reset to 00h when the battery voltage ramps up. Writes take effect immediately. To prevent unexpected increments during write access, first update the seconds; this creates a 1s window to finish updating the RTC/Calendar registers without any carryover from the Seconds register. Whenever the DS28DG02 receives a SPI Read command, the RTC and Calendar registers are copied to a buffer. When during a read access the address counter points to the RTC/Calendar registers, data from the buffer is transmitted. To obtain most accurate RTC data, start reading at the Seconds register. The number representation of the RTC/Calendar registers is BCD (binary-coded decimal). The RTC can run in the 12-hour AM/PM and the 24-hour mode. The "12/24" bit (bit 6 of address 12Bh) defines the mode. For 12-hour AM/PM mode, set this bit to 1; bit 5 of address 12Bh then indicates AM (0b) or PM (1b). In the 24-hour mode, bit 5 and bit 4 together indicate the multiple of 10 hours. The Day of Week register counts from 1 to 7. The calendar logic is designed to automatically compensate for leap years. For every year value that is either 00 or a multiple of 4 the device will add a 29th of February. This will work correctly up to (but not including) the year 2100.
RTC Alarm Registers
ADDR 130h 131h 132h 133h
b7 AM1 AM2 AM3 AM4
b6
b5 10 Seconds 10 Minutes 10hrs A/P 0
b4
b3
b2
b1
b0
Single Seconds Single Minutes 10hrs 0 0 Single Hours Day of Week Single Date
12/24 DY/DT
10 Date
There is general read and write access to these addresses. Bits shown as 0 cannot be written to 1. The RTC Alarm registers are reset to 00h when the battery voltage ramps up. To generate an alarm, there must be a match between Alarm registers and RTC registers. Alarm register addresses 130h to 132h correspond to RTC register addresses 129h to 12Bh; bits 6:0 participate in the comparison. The lower 6 bits of register address 133h correspond to 12Ch if DY/DT is 1 and to 12Dh if DY/DT is 0; the upper 2 bits of this register do not participate in the comparison. The control bits AM1, AM2, AM3, and AM4 determine the frequency of the alarm, as shown in Table 1. When the alarm occurs, the CLKA bit of the Alarm and Status register at address 135h changes to 1. The RTC must be running for the device to generate RTC alarms (OSCE at address 134h = 1).
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Table 1. Alarm Frequency Control
DY/DT X X X X 1 0 AM4 X X X 1 0 0 AM3 X X 1 0 0 0 AM2 X 1 0 0 0 0 AM1 1 0 0 0 0 0 Every second Every minute, when the seconds match Every hour, when minutes and seconds match Every day, when hours, minutes, and seconds match Every week, when day, hours, minutes, and seconds match Every month, when date, hours, minutes, and seconds match ALARM OCCURRENCE
Multifunction Control/Setup Register ADDR 134h b7 0 b6 BME b5 BTRP b4 b3 WDOS b2 WDE b1 OSCE b0 CAE
There is general read and write access to this address. Bit 7 always reads 0; it cannot be written to 1. This register is reset to 00h when the battery voltage ramps up. See Figure 5 for the use of the CAE, WDE, WDOS, and BME bits in the generation of the ALMZ, RSTZ, and WDOZ signals. BIT DESCRIPTION CAE: Clock Alarm Enable OSCE: RTC Oscillator Enable WDE: Watchdog Enable WDOS: Watchdog Output Selection BTRP: Battery Monitor Trip Point BIT(S) b0 b1 DEFINITION Enable/disable control of the RTC/Calendar alarm. Legend: 0 disabled (power-on default); 1 enabled Run/halt control of the RTC's 32KHz oscillator Legend: 0 halted (power-on default); 1 running
b2
Enable/disable control of the watchdog and its alarm. Legend: 0 disabled (power-on default); 1 enabled The watchdog timer is reset by changing WDE from 0 to 1, VCC ramp up (Power-on reset) or applying a positive pulse at the WDI pin. Pin selection for watchdog alarm signaling. Legend: 0 WDOZ pin (power-on default); 1 ALMZ pin
b3 b5:b4
Selection of the nominal Battery Monitor Trip Point voltage. Legend: 00b 1.75V (power-on default); 01b 2.00V; 10b 2.25V; 11b 2.50V Enable/disable control of the Battery Monitor and its alarm. Legend: 0 disabled (power-on default); 1 enabled The battery test takes place a) after BME changes to 1, b) after VCC ramps up, c) every hour on the hour. The RTC must be running (OSCE = 1) for the battery monitor to function.
BME: Battery Monitor Enable
b6
Alarm and Status Register ADDR 135h b7 0 b6 BATA b5 WPZV b4 POR b3 BOR b2 CLKA b1 WDA b0 RST
There is general read access to this address; writing clears all bits to 0. Bit 7 always reads 0. See Figure 5 for the use of the CLKA, WDA, and BATA bits in the generation of the ALMZ, RSTZ, and WDOZ signals.
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog BIT DESCRIPTION RST: Reset Flag BIT(S) b0 DEFINITION RSTZ pin activity indicator; set whenever there is a pulse at RSTZ; cleared by writing to the Alarm and Status register. VCC ramp up: 1; VBAT attach: 0 Watchdog Alarm indicator; set whenever the watchdog is enabled AND the watchdog timer expires; cleared by writing to the Alarm and Status register. VCC ramp up: 0; VBAT attach: 0
RTC/Calendar Alarm indicator; set whenever the clock alarm is enabled
WDA: Watchdog Alarm
b1
CLKA: Clock Alarm
b2
AND RTC and RTC Alarm register match; cleared by writing to the Alarm and Status register. VCC ramp up: 0; VBAT attach: 0 Battery attach indicator; set whenever the voltage at VBAT ramps up above VBATmin; cleared by writing to the Alarm and Status register. VCC ramp up: not affected; VBAT attach: 1 Power-On Reset indicator; set whenever the voltage at VCC ramps up above VCCmin; cleared by writing to the Alarm and Status register. VCC ramp up: 1; VBAT attach: 0 WPZ pin state readout; reports the logic state at the WPZ pin; VCC ramp up: WPZ pin state; VBAT attach: not affected. Low Battery indicator; set whenever the battery alarm is enabled AND if, during a battery test, VBAT is below the selected VBAT trip point; cleared by writing to the Alarm and Status register. VCC ramp up: battery test if BME = 1; VBAT attach: 0
BOR: Battery-On Reset Flag POR: Power-On Reset Flag WPZV: Hardware Write Protect Value BATA: Battery Alarm
b3
b4 b5
b6
Figure 5. ALMZ, WDOZ, and RSTZ Generation
BME BATA CAE CLKA ALMZ
WDOZ WDE WDA WDOS RSTZ VCLA
Debounce
BME, CAE, WDE, WDOS are defined in the Control/Setup register. BATA, CLKA, WDA are alarm signals readable through the Alarm/Status register. VCLA is the alarm output of the VCC monitor.
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
MONITORING FUNCTIONS
The DS28DG02 has two voltage monitors: one for the VCC supply voltage and another one for the battery that supplies the RTC and associated registers if VCC is switched off. If VCC falls below the VTRIP threshold the VCC monitor activates the open-drain RSTZ output, as shown in Figure 6. There is a delay of tDEL between crossing the trip point and RSTZ going LOW. As long as VCC is above VPOR or the device has a functioning battery backup, the logic level at RSTZ does not exceed VOLmax. Without battery support, the state of the RSTZ output is undefined for VCC values below VPOR. When VCC ramps up, RSTZ remains at LOW until the VTRIP threshold is reached. As VTRIP is crossed, the voltage at RSTZ rises until it reaches VTRMS, the manual reset release threshold. This activates the debounce circuit, which holds RSTZ low for tRST. After tRST is expired, the voltage at RSTZ ramps up to the value of the applied pullup voltage.
Figure 6. RSTZ Power-Fail Reset
VCC VTRIP VPOR
VCC
*
RSTZ
tDEL
tRST
With the VBAT pin tied to VCC, the RSTZ behavior for VCC < VPOR is undefined. * VCC or the applicable pullup voltage for the RSTZ pin.
As VTRIP is crossed, the voltage at RSTZ starts rising, which triggers the manual switch debounce circuit and activates RSTZ for tRST.
The RSTZ pin is internally connected to a debounce circuit, which allows using a manually operated switch to generate a reset signal. Figure 7 illustrates the timing of the manual reset. As the switch closes, it forces the voltage at RSTZ to fall below VILmax, which triggers the debounce circuit. Now the voltage at RSTZ is held at logic LOW by both, the manual switch and the debounce circuit. When the manual switch is opened or tDEB is over, (whichever occurs later) the voltage at RSTZ rises until it reaches VTRMS. This again triggers the debounce circuit, which holds RSTZ low for tRST, after which the voltage at RSTZ ramps up to the pullup voltage. The minimum LOW time of a manually generated reset is tDEB + tRST.
Figure 7. RSTZ Manual Switch Debounce
Open
Manual Switch
closed
VCC
*
RSTZ
VTRMS
RSTZ held low by DS28DG02
RSTZ held low by manual switch
tDEB
tRST
For tRST to start, the voltage at RSTZ has to cross VTRMS after tDEB is expired. * VCC or the applicable pullup voltage for the RSTZ pin.
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog In contrast to the VCC monitor, the battery monitor is active only for two seconds per hour, and only if it is enabled through the BME bit in the Multifunction Control/Setup register. In addition to this, the DS28DG02 must have sufficient VCC power and the RTC must be running (OSCE = 1). The battery test takes place a) immediately after enabling the battery monitor, and, if the battery monitor is enabled, b) every hour on the full hour, and c) immediately after VCC ramps up above VPOR. Figure 8 shows the details. The battery test procedure begins with the DS28DG02 internally connecting the test load to the VBAT pin. If the battery is near the end of its lifetime, this extra load causes the battery voltage to fall below VBTP, the Battery Trip Point. After the stabilization window is over, the actual comparison of the battery voltage to the battery trip point takes place. If at the beginning of or during the battery test window the battery voltage falls below VBTP, the battery alarm flag BATA in the Alarm and Status register is set, which in turn activates the ALMZ output. The BATA flag is cleared by a) replacing the battery, or b) by writing to the Alarm and Status register. The BATA flag is not cleared if a subsequent battery test, e.g., one hour later or after power-cycling the DS28DG02, determines that the battery voltage is above VBTP. Note that replacing the battery resets the RTC and clears the Multifunction Control/Setup register. Battery monitoring is only useful when performed regularly. Equipment that is powered-down for excessively long periods can completely drain its battery without receiving any advanced warning. To prevent such an occurrence, equipment using the battery-monitoring feature should be switched on periodically, e.g., once a month, to perform a battery test.
Figure 8. Battery Monitor Operation
VBAT VBTP
0V Test Load On off
Stabilization Window Battery Test Window
1s
1s
BATA ALMZ
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
SPI INTERFACE
The DS28DG02 is a slave device that communicates with its master, a microcontroller, through the serial SPI interface. This interface uses the signals CSZ (chip select), SCK (bit transfer clock), SI (serial input), and SO (serial output). Common to SPI devices is a WPZ input (write protect), which can protect the nonvolatile bits in the SPI Status register from inadvertent changes.
Pin Description
Chip Select (CSZ) A low level on the CSZ pin selects the device; a high level deselects the device. A low-to-high transition on CSZ after a valid EEPROM write sequence initiates an internal programming cycle. A programming cycle already initiated or in progress will be completed, regardless of the CSZ input signal. When the device is deselected, SO goes to the high-impedance state, allowing multiple parts to share the same SPI bus. After powerup, a low level on CSZ is required prior to any sequence being initiated. The CSZ pin must remain low while the DS28DG02 is receiving or transmitting data. Serial Clock (SCK) The SCK is used to synchronize the communication between a master and the DS28DG02. Instructions, addresses, or data present on the SI pin are latched on the rising edge of the clock input, while data on the SO pin is updated after the falling edge of the clock input. Serial Input (SI) The SI pin is used to transfer data into the device. It receives instructions, addresses, and data. Data is latched on the rising edge of the serial clock. Serial Output (SO) The SO pin is used to transfer data out of the DS28DG02. During a read cycle, data is shifted out on this pin after the falling edge of the serial clock. Write Protect (WPZ) The WPZ pin, if enabled, prevents writes to the nonvolatile bits in the SPI Status register. As factory default, the WPZ pin function is disabled. This allows the user to install the DS28DG02 in a system with WPZ pin grounded and still being able to write to the Status register. For more details see Principles of Operation.
SPI Modes and Bit Timing
The SPI protocol defines communication in full bytes with the MS bit being transmitted first. Every SPI communication sequence begins with at least one byte written to the slave device. The first byte that the slave receives from the master is understood as an instruction. Depending on the instruction the slave may need more bytes, e.g., address and data; for a read function, after having received the instruction and address, the slave starts sending data to the master. The SPI protocol knows four communication modes, which differ in the polarity and phase of the SCK signal. The DS28DG02 supports modes (0,0) and mode (1,1). These modes have in common that data is clocked into the slave on the rising edge and clocked out to the master on the falling edge of SCK. The master then clocks in the data on the rising edge of SCK. The DS28DG02 detects the mode from the logic state of SCK when CSZ gets active (high to low transition). Therefore, SCK must be stable for the duration of a setup and hold time around the falling edge of CSZ. Figures 9 and 10 show the timing details. The read timing of these graphics begins with the first bit that the DS28DG02 transmits to the master and ends when the master ends the communication by deactivating CSZ (low to high transition). The dotted line indicates the transition between read and write, with the last bit of the command or address being clocked in on the rising edge and the first bit of read data appearing at SO after the falling edge of SCK.
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Figure 9. SPI Timing, Mode (0,0)
CSZ SCK
tDS tDH
Writing to the device
tCPH
tCSS
tCSH
SI SO
Data Valid High Impedance High Impedance
CSZ
tCLL
Reading from the device
tCSH
SCK SO
tCLH tHO Data Valid tV tCHZ
SI
Figure 10. SPI Timing, Mode (1,1)
CSZ SCK
tDS tDH
Writing to the device
tCSS tCSH
tCPH
SI SO
Data Valid High Impedance High Impedance
CSZ
tCLL
Reading from the device
tCLH tCSH
SCK
tHO tCHZ
SO
tV
Data Valid
SI
Legend: tCLH = 0.5 * (1/fCLK - tSCKR -tSCKF)
tCLL = 0.5 * (1/fCLK - tSCKR -tSCKF) 18 of 33
tHO = tVMIN
DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Principles of Operation
The first byte that the DS28DG02 receives from the master after a falling edge on CSZ is interpreted as an instruction. The DS28DG02 supports a set of seven instructions, which are summarized in Figure 11. The protocol uses only a single address byte. The 9th address bit necessary to access addresses of 100h and higher is included in the instruction code, marked as "X".
Figure 11. SPI Instruction Set
INSTRUCTION NAME WREN Write Enable WRDI Write Disable WRSR Write Status Register RDSR Read Status Register RFSH Refresh Registers WRITE Write to Memory READ Read Memory INSTRUCTION CODE 0000 0110b 0000 0100b 0000 0001b 0000 0101b PROTOCOL Tx Instruction Code Tx Instruction Code Tx Instruction Code Tx SPI Status Byte Tx Instruction Code Rx SPI Status Byte Tx Instruction Code Tx Instruction Code Tx Address Byte Tx Data Byte(s) Tx Instruction Code Tx Address Byte Rx Data Byte(s) PURPOSE To set the WEN bit in the SPI Status register. (Enable Writes to Memory) To clear the WEN bit in the SPI Status register. (Disable Writes to Memory) To update the SPI Status register. To read SPI Status register; to detect the end of an EEPROM write cycle. To update the SRAM registers at addresses 120h to 125h with their power-on default values without powercycling. To write to the memory, register, PIOs, or the RTC, depending on the specified address. To read from the memory, register, PIOs, or the RTC, depending on the specified address.
0000 0111b
0000 X010b
0000 X011b
The first four instructions relate to the SPI Status register, which contains control bits and a status bit. The SPI Status register is not memory-mapped and can only be updated through SPI instructions. It holds several bits that control an elaborate scheme to prevent inadvertent changes of data stored in the device: A write-enable bit WEN that needs to be set through a write-enable instruction WREN before a write instruction is accepted. The WEN bit is automatically cleared after successful execution of a write instruction. Hardware write-protection of b7:b2 (nonvolatile bits) of the SPI Status register through the write-protect enable bit WPEN in conjunction with the logic state at the WPZ pin. Write-Protect bits for memory blocks and the registers from address 120h and higher. The combined effect of WEN, WPEN, and WPZ is summarized in Table 2. The full description of the SPI Status register bit functions is found in Figure 12.
Table 2. Write Protection Summary
WEN BIT 0 1 1 1 WPEN BIT x 0 1 1 WPZ PIN x x 0 1 SPI STATUS REGISTER Write-protected (because WEN = 0). Writeable (because WPEN = 0). Write-protected (because WPEN = 1 AND the WPZ pin is at logic 0). Writable (because WPEN = 1 AND the WPZ pin is at logic 1). 19 of 33 MEMORY Write-protected (because WEN = 0). Conditional write access: BP1:BP0 control protection of addresses 00h to FFh. RPROT controls protection of addresses 120h and higher.
DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Figure 12. SPI Status Register
ADDR N/A b7 WPEN b6
RPROT
b5 WD1 BIT(S) b0
b4 WD0
b3 BP1
b2 BP0
b1 WEN DEFINITION
b0 RDYZ
BIT DESCRIPTION RDYZ: Ready (ReadOnly Bit) WEN: Write Enabled (Read-Only Bit)
Indicates whether an EEPROM write cycle is in progress. Legend: 0 ready (normal state); 1 write cycle in progress Indicates whether the device will accept a WRITE instruction; set through the WREN instruction; cleared through the WRDI instruction or completion of a valid WRITE or a valid WRSR instruction. Legend: 0 write disabled (power-on default); 1 write enabled These bits specify which of the four user memory blocks are writeprotected (independent of WPEN and WPZ). Legend: 00b not protected (factory default) 01b block 3 (0C0h to 0FFh) protected 10b blocks 2 and 3 (080h to 0FFh) protected 11b blocks 0 to 3 (000h to 0FFh) protected These bits specify the duration of the watchdog timeout if the watchdog is enabled (WDE at address 134h = 1). Legend: 00b 1.64s (factory default); 01b 820ms 10b 410ms; 11b 200ms These are nominal values; for tolerances see Electrical Characteristics. Specifies whether the writeable addresses in the range of 120h and higher are write-protected (independent of WPEN and WPZ). Legend: 0 not protected (factory default); 1 protected Specifies whether b7:b2 of the SPI Status register (nonvolatile bits) are writeable or whether the WPZ pin state controls the write-protection. Legend: 0 writeable (factory default) 1 protection controlled by WPZ pin state If WPEN = 1 and WPZ pin state is 0 the SPI Status register is writeprotected and a WRSR instruction is not valid.
b1
BP1:BP0: Block Write Protect
b3:b2
WD1:WD0: Watchdog Timeout
b5:b4
RPROT: Register Protection
B6
WPEN: Hardware Write Protect Enable
b7
DETAILED DESCRIPTION--SPI INSTRUCTION SET
WREN Write Enable
Before any write access to the device, the WEN bit in the SPI Status register must be set. The only way to set this bit is through the write-enable instruction. The WEN bit is cleared when the device powers up, after the successful execution of a write access instruction (WRSR or WRITE) and through WRDI. Figure 13 shows the instruction's timing diagram for both SPI communication modes.
WRDI Write Disable
The WRDI instruction can be used to clear the WEN bit of the SPI Status register, e.g., after an unsuccessful write access instruction. Figure 14 shows the instruction's timing diagram for both SPI communication modes.
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Figure 13. Write-Enable Timing
CSZ
0
Write Enable, Mode (0,0)
1 2 3 4 5 6 7
SCK SI SO CSZ
0
0
0
0
0
0
1
1
0
High Impedance
Write Enable, Mode (1,1)
1 2 3 4 5 6 7
SCK SI SO
0
0
0
0
0
1
1
0
High Impedance
Figure 14. Write-Disable Timing
CSZ
0
Write Disable, Mode (0,0)
1 2 3 4 5 6 7
SCK SI SO CSZ
0
0
0
0
0
0
1
0
0
High Impedance
Write Disable, Mode (1,1)
1 2 3 4 5 6 7
SCK SI SO
0
0
0
0
0
1
0
0
High Impedance
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
WRSR Write SPI Status Register
The WRSR instruction is the only way to update the nonvolatile bits (b7:b2) of the SPI Status register. See Figure 12 for a detailed description of the nonvolatile bits and their function. As a precondition for a successful write access to the Status register, the WEN bit must be 1 and either the WPEN bit must be 0, or both WPEN and the logic state at the WPZ pin must be 1, as shown in the write protection summary of Table 2. The WEN bit is set through the WREN instruction, which must be completed before any write instruction. The WRSR timing diagram for both SPI communication modes is shown in Figure 15. The graphic assumes that only a single byte follows the instruction code. In case of multiple bytes following the instruction code, the last of these data bytes is used to update the SPI Status register. If the SPI Status register is not write-protected AND the WEN bit 1, the write cycle (transfer to EEPROM) begins with the positive edge of CSZ. The duration of the write cycle is tPROG, during which the RDYZ bit of the SPI Status register reads 1. After the write cycle is completed, the WEN bit is cleared. If the SPI Status register is write-protected OR WEN was not set to 1 before issuing the WRSR instruction, the positive edge on CSZ does not start a write cycle and the WEN bit is not cleared. The first Read Memory sequence executed after WRSR always delivers data from addresses 100h and higher, regardless of the address bit in the instruction code.
Figure 15. Write SPI Status Register Timing
CSZ
0 1 2 3 4
Write Status, Mode (0,0)
5 6 7 8 9 10 11 12 13 14
tPROG
15
SCK
Instruction Data to SPI Status Register
0 0 0 1 7 6 5 4 3 2 1 0
SI SO CSZ
0
0
0
0
High Impedance
Write Status, Mode (1,1)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
tPROG
15
SCK
Instruction Data to SPI Status Register
0 0 0 1 7 6 5 4 3 2 1 0
SI SO
0
0
0
0
High Impedance
RDSR Read SPI Status Register
RDSR is the only instruction that the DS28DG02 accepts and executes at any time, even if an EEPROM write cycle is in progress. See Figure 12 for a detailed description of the SPI Status register bits. Besides providing general read access to the SPI Status register, the main use of this instruction is for the master to test the RDYZ bit, which signals the end of an EEPROM write cycle. Figure 16 shows the RDSR timing diagram for both SPI communication modes. The RDYZ state reported through the RDSR instruction is updated on the negative edge of SCK during the transmission of the LS-bit of the status byte (highlighted in Figure 16, the Mode (0,0) 16 clock cycles graphic). This allows the master to repeatedly read the SPI Status register by generating additional SCK pulses, without having to resend the instruction code. The RDSR instruction ends with the positive edge on CSZ. 22 of 33
DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Figure 16. Read SPI Status Register Timing
CSZ
0 1
Read Status, Mode (0,0), 16 Clock Cycles Version
2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK
Instruction
SI SO
0
0
0
0
0
1
0
1
High Impedance
Data from SPI Status Register
7 6 5 4 3 2 1 0
Next Byte
7
CSZ
0 1
Read Status, Mode (0,0), 15 Clock Cycles Version
2 3 4 5 6 7 8 9 10 11 12 13 14
SCK
Instruction
SI SO
0
0
0
0
0
1
0
1
High Impedance
Data from SPI Status Register
7 6 5 4 3 2 1 0
CSZ
0 1 2 3
Read Status, Mode (1,1)
4 5 6 7 8 9 10 11 12 13 14 15
SCK
Instruction
SI SO
0
0
0
0
0
1
0
1
High Impedance
Data from SPI Status Register
7 6 5 4 3 2 1 0
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
RFSH Refresh PIO Registers
The volatile PIO-related registers from address 120h to 125h are preset with their power-on default values stored in EEPROM when the device powers up. The fastest way for the master to restore the power-on state without powercycling the DS28DG02 is through the RFSH instruction. The RFSH timing diagram for both SPI communication modes is shown in Figure 17. The PIO register restore begins when the last bit of the instruction code is clocked into the device (highlighted SCK transition) and ends after the power-up wait time (tPOIP) is over.
Figure 17. Refresh PIO Registers Timing
CSZ
0
Refresh, Mode (0,0)
1 2 3 4 5 6 7
SCK SI SO CSZ
0
0
0
0
0
0
1
1
1
High Impedance
Refresh, Mode (1,1)
1 2 3 4 5 6 7
SCK SI SO
0
0
0
0
0
1
1
1
High Impedance
WRITE Write to Memory and PIO
From the perspective of the master, the DS28DG02 is a memory device with memory ranges made of EEPROM, SRAM and ROM. Depending on the memory type, the behavior of the device upon receiving a write instruction varies. Table 3 shows the cases that need to be distinguished.
Table 3. Write Access Cases
STARTING ADDRESS 000h to 0FFh 100h to 10Fh 110h to 11Fh 120h to 135h 136h to 1FFh DESCRIPTION User memory (can be write-protected through BP1:BP0). EEPROM registers (reserved and power-on default values, no write-protection). Read-only memory. SRAM, PIO, and NV SRAM (may be write-protected through RPROT). Nonexisting memory.
The four blocks of user memory consist of 16 segments of 16 bytes each. The first segment begins at address 000h and ends at address 00Fh; segment 2 ranges from 010h to 01Fh, etc. Upon receiving a write instruction with an address targeting the user memory, any data bytes that follow the address are written to a 16-byte buffer, beginning at an offset that is determined by the 4 least significant bits of the target address. This buffer is initialized (pre-loaded) with data from the addressed 16-byte EEPROM segment. Incoming data replaces pre-loaded data. With every byte received, the buffer's write pointer is incremented. This allows updating from 1 to 16 bytes starting anywhere within the segment. If the write pointer has reached its maximum value of 1111b and additional data is received, the pointer wraps around (rolls over) and the incoming data is written to the beginning of the EEPROM write buffer and continuing. If the target memory is not write-protected AND the WEN bit of the SPI Status register 24 of 33
DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog is 1 AND the number if bits sent by the master is a multiple of 8 (i.e., full byte only), the write cycle (transfer from the buffer to EEPROM) begins with the positive edge of CSZ. The duration of the write cycle is tPROG, during which the RDYZ bit of the SPI Status register reads 1. After the write cycle is completed, the WEN bit is cleared. If the target memory is write-protected OR WEN was not set to 1 before issuing the WRITE instruction OR the number of data bits that followed the address byte was not a multiple of 8, the positive edge on CSZ does not start a write cycle and the WEN bit is not cleared. The six EEPROM registers, together with the reserved addresses, form another memory segment. Write access to this segment is essentially the same as for the user memory with the following differences: The data sent by the master that normally would apply to the first 10 bytes of the segment is discarded. A write cycle is initiated only if the WEN bit of the SPI Status register is 1 AND the number if bits sent by the master is a multiple of 8 (i.e., full byte only) AND at least one EEPROM byte is to be updated. If WEN was not set to 1 before issuing the WRITE instruction OR the number of data bits that followed the address byte was not a multiple of 8 OR all data bytes sent by the master applied to the nonwriteable addresses, the positive edge on CSZ does not start a write cycle and the WEN bit is not cleared. Write access to the SRAM, PIO, and NV SRAM does not involve a write buffer. If the WEN bit is 1 AND RPROT = 0 AND the target address is writeable, a data byte that follows the target address becomes effective as soon as its transmission is completed. The address pointer increments after each data byte, directing subsequent bytes to the next higher addresses. If the target address is read-only, data for that address is discarded. After address 135h is updated, the address pointer wraps around to 120h. The master may continue sending data bytes indefinitely. The write access ends with the positive edge on CSZ. The last byte, if incomplete, is ignored. The WEN bit is cleared only if at least one byte was written to a writeable address. If RPROT = 1 the memory is not updated and the WEN bit remains set. The RTC should be updated starting with the Seconds register. If the starting target address specified after the instruction code points to the PIO Output State registers (address 120h or 121h) and the PIO output mode OTM is 0 (low current) the address pointer toggles between 120h and 121h after the data byte is transmitted. This allows fast PIO updates, e.g., for generating data patterns. For OTM = 1 (high-current) the address pointer increments to the next higher address. For a PIO-update timing diagram and the differences between low-current and high-current mode, see the PIO Read/Write Access section. Upon receiving a write instruction with an address targeting the read-only memory or non-existing memory, all data is discarded and no write cycle or data update takes place. Since the write access is not successful, the WEN bit in the SPI Status register is not cleared. As a precondition for a successful WRITE instruction, the WEN bit in the SPI Status register must be 1. The WEN bit is set through the WREN instruction, which must be completed before the WRITE instruction. The WRITE timing diagram for both SPI communication modes is shown in Figure 18 (single-byte write) and Figure 19 (multiple-byte write). The programming time tPROG applies only to EEPROM writes. For writes to the SRAM, PIO, and NV SRAM in SPI mode (0,0) the actual transfer to the target memory takes place on the falling SCK edge of the LS-bit of a data byte. In SPI mode (1,1) the actual transfer to the target memory also takes place on the falling SCK edge of the LSbit of a data byte, except for the last byte, which is transferred on the rising edge of CSZ.
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Figure 18. Single-Byte Write to Memory and PIO Timing
CSZ
0 1 2 3 4
Single-Byte Write Timing, Mode (0,0)
tPROG
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCK
Instruction 8-bit Address
1 0 7 6 5 4 3 2 1 0 7 6
Data Byte
5 4 3 2 1 0
SI SO CSZ
0
0
0
0
A8 0
High Impedance
Single-Byte Write Timing, Mode (1,1)
tPROG
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCK
Instruction 8-bit Address
1 0 7 6 5 4 3 2 1 0 7 6
Data Byte
5 4 3 2 1 0
SI SO
0
0
0
0
A8 0
High Impedance
Figure 19. Multiple-Byte Write to Memory and PIO Timing
CSZ
0 1 2 3 4
Multiple-Byte Write Timing, Mode (0,0)
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCK
Instruction 8-bit Address
1 0 7 6 5 4 3 2 1 0 7 6
Data Byte 1
5 4 3 2 1 0
SI
0
0
0
0
A8 0
CSZ SCK
Data Byte n-2 Data Byte n-1
1 0 7 6 5 4 3 2 1 0 7 6
tPROG
Data Byte n
5 4 3 2 1 0
SI
7
6
5
4
3
2
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Figure 19. Multiple-Byte Write to Memory and PIO Timing (continued)
CSZ
0 1 2 3 4
Multiple-Byte Write Timing, Mode (1,1)
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCK
Instruction 8-bit Address
1 0 7 6 5 4 3 2 1 0 7 6
Data Byte 1
5 4 3 2 1 0
SI
0
0
0
0
A8 0
CSZ SCK
Data Byte n-2 Data Byte n-1
1 0 7 6 5 4 3 2 1 0 7 6
tPROG
Data Byte n
5 4 3 2 1 0
SI
7
6
5
4
3
2
Read Memory and PIO
The read timing diagram for both SPI communication modes is shown in Figure 20. The read-access timing is independent of the addressed memory type. Upon receiving a read instruction with an address in the range of 000h to 135h the DS28DG02 transmits data, first the SPI Status register value and then data from the specified target address. Addresses marked "reserved" read 00h. The address pointer increments with every data byte transmitted to the master. After data from address 135h is read, the address pointer wraps around to 000h. The master may continue reading data bytes indefinitely. The read access ends with the positive edge on CSZ. If prior to the Read Memory and PIO sequence a WRSR command was executed, the address bit embedded in the instruction code is ignored and data is delivered from addresses 100h and higher. The application firmware should include a command such as WRDI after WRSR to ensure reading from the intended address.
Figure 20. Read Memory and PIO Timing
CSZ
0 1 2 3 4 5 6
Read Timing, Mode (0,0)
8 Falling Edges for Each Data Byte
7
8
9
10 11 12 13 14 15
SCK
Instruction 8-bit Address
1 1 7 6 5 4 3 2 1 0 See Note
SI SO
1)
0
0
0
0
A8 0
High Impedance
Data Byte
7 6 5 4 3
1)
2
1
0
7
Note: This edge ends the LS bit (0) of the previous byte and begins the MS bit (7) of the next byte.
The first byte delivered by the device is the SPI Status Byte. After that the memory data follows.
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Figure 20. Read Memory and PIO Timing (continued)
CSZ
0 1 2 3 4 5 6
Read Timing, Mode (1,1)
8 Falling Edges for Each Data Byte
7
8
9
10 11 12 13 14 15
SCK
Instruction 8-bit Address
1 1 7 6 5 4 3 2 1 0 See Note
SI SO
1)
0
0
0
0
A8 0
High Impedance
Data Byte
7 6 5 4 3
1)
2
1
0
7
Note: This edge ends the LS bit (0) of the previous byte and begins the MS bit (7) of the next byte.
The first byte delivered by the device is the SPI Status Byte. After that the memory data follows.
When reading the RTC and Calendar registers, the data reported to the master is taken from a buffer. This buffer is loaded when the least significant address bit is transmitted during a READ instruction. This buffer is not updated between bytes or when the address pointer wraps around. If the starting target address specified after the instruction code points to the PIO Read Access registers (address 126h or 127h) the address pointer toggles between 126h or 127h after a data byte is transmitted. This allows fast PIO reads, e.g., to monitor several signals. For a PIO-read timing diagram see the PIO Read/Write Access section. If a read instruction requests data from nonexisting memory, the DS28DG02 initially transmits 00h bytes until the address pointer eventually changes to 000h. Subsequently, the device transmits valid data and the read pointer increments normally, wrapping around to 000h after having reached 135h.
PIO Read/Write Access
General Information When the DS28DG02 powers up, the PIO direction, output state, output type, output mode, and read-inversion are set automatically from power-on default values stored in EEPROM. The duration of this initialization phase is tPOIP, during which each PIO is temporarily set as input with the output driver tri-stated to prevent conflicts with circuitry connected to the PIO pins. The output drivers of PIOs that are configured as input are tri-stated (high impedance). The PIO output drivers of the DS28DG02 are designed to deliver high currents for driving LEDs or similar loads. Switching multiple PIOs conducting high current simultaneously could errantly trigger the reset monitor circuit. To prevent this from happening, it is necessary to set the OTM bit at address 125h, which activates the high-current mode where the PIO channels switch sequentially. In high-current mode changes in direction or output type do not take effect immediately; they are delayed until the next PIO write access when the associated bit transition is evaluated. Since writing to PIOs is a write function, the WEN bit must be set before issuing the WRITE instruction. Writing in Low-Current Mode When writing to PIOs in low-current mode, as shown in Figure 21, any state change is triggered by the falling edge of SCK after the last bit of the new PIO state is shifted into the DS28DG02. All addressed PIOs (8 with address 120h or 4 with address 121h) change their state approximately at the same time. After the output transition time tOT is expired, the state change is completed. If the WRITE instruction is issued with starting address 120h, the DS28DG02 enters a loop in which incoming data is directed to both groups of PIOs alternating between PIO0:7 and PIO8:11. This way the fastest rate for a PIO to change its state is fCLK / 16.
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Figure 21. PIO Write Access Timing, Low-Current Mode
SCK
This edge clocks in the last (LS) bit of the new PIO data byte. The tOT timing reference is 80% or 20% of maximum current. This edge starts the transfer of the new data to the PIO pins. See Note.
tOT
PIOn
Note: In SPI Mode (1,1) there is no falling SCK edge for the last bit of the last byte sent to the device; in this case, the transfer to the PIO is initiated with the rising edge of CSZ. This note also applies to the high-current mode. Writing in High-Current Mode When writing to PIOs in high-current mode, the state change is triggered by the falling edge of SCK after the last bit of the new PIO state is shifted into the DS28DG02. The PIOs change their state sequentially, as shown in Figure 22, beginning with PIO0 or PIO8, respectively, depending on the address. A PIO that is changing its state is first tristated for 2s maximum. This 2s delay also applies to PIOs configured as input and to PIOs configured as output that do not change their state. The state transition of PIOs in high-current mode is slew-rate controlled to prevent immediate full current-drive or release. Each pin's slew-rate circuit is designed to ramp up to the full current drive or release over the course of 1s. The tOT value specified for high-current mode is valid when updating all 12 PIOs in a single write access. In this case there is an extra 1s maximum delay when transitioning from PIO7 to PIO8. In high-current mode, the automatic alternation between groups of PIOs does not apply; another WREN and WRITE sequence is necessary to update the PIO states again.
Figure 22. PIO Write Access Timing, High-Current Mode
SCK
This edge clocks in the last (LS) bit of the new PIO data byte.
Tri-stated 2s max.
1s max.
PIO0 (PIO8)
PIO1 (PIO9)
PIO2 (PIO10)
PIO3 (PIO11)
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog Reading from PIO When reading from PIOs, as shown in Figure 23, the sampling is triggered by the same edge that the master uses to clock in (read) the last data (LS) bit of the preceding byte, which may be PIO data or SRAM data. To be correctly assessed, the PIO state must not changed during the tPS and tPH interval. The SO state is valid tV after the falling edge of SCL. When reading from address 126h, the PIO state appearing first on SO is that of PIO7. With every falling edge on SCK the next PIO state appears on SO. On the rising SCK edge after the state of PIO0 is shifted out to SO, the PIOs of address 127h are sampled. Reading from address 127 first results in four 0-bits followed by the state of PIO11 to PIO8. If the READ instruction is issued with starting address 126h, the DS28DG02 enters a loop in which both groups of PIOs are read alternating between PIO0:7 and PIO8:11. This way the fastest PIO sampling rate is fCLK / 16.
Figure 23. PIO Read-Access Timing
SCK
On this edge the master reads the LS bit of the previous PIO data byte. This edge shifts the MS bit of the just sampled PIO state to SO.
Sampling
tPS PIOn
tPH
SPI Communication--Legend
SYMBOL SEL DSEL WREN WRDI WRSR RFSH DESCRIPTION Falling Edge on CSZ Rising Edge on CSZ Write Enable Instruction Write Disable Instruction Write Status Register Instruction Refresh Instruction SYMBOL WRITEL WRITEH READL READH DESCRIPTION Write Instruction with A8 = 0 Write Instruction with A8 = 1 Read Instruction with A8 = 0 Read Instruction with A8 = 1 Transfer of 1 Byte
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Command-Specific Communication--Color Codes
Master-to-Slave Slave-to-Master Programming
Communication Examples
Set the WEN Bit in the SPI Status Register (Write Enable) SEL WREN DSEL
Clear the WEN Bit in the SPI Status Register (Write Disable) SEL WRDI DSEL
Write to the SPI Status Register Sequence SEL WREN DSEL SEL WRSR DSEL Programming
Note: It is advisable to execute a WRDI command right after the WRSR sequence is completed to ensure read access to the user memory.
Read Status Register (e.g., to Detect the End of a Write Cycle) SEL RDSR DSEL Continue reading until RDYZ bit is is 0 Refresh PIOs with Power-On Defaults SEL RFSH DSEL
Write 3 Bytes to User Memory Sequence, Starting Address = 067h SEL WREN DSEL SEL WRITEL <67h> DSEL Programming
See Read Status register example to test for the end of the write cycle. Set RTC and Calendar, Starting Address = 129h SEL WREN DSEL SEL WRITEH <29h> <7 bytes RTC data> DSEL
SRAM, no programming time. Read User Memory Block 1, Starting Address = 040h, 64 Bytes SEL READL <40h> <64 bytes memory data> DSEL
Read all PIOs 3 Times, Starting Address = 126, 6 Bytes SEL READH <26h> <6 bytes PIO data> DSEL 31 of 33
DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Figure 24. Crystal Placement on PCB
Guard ring on signal plane
Crystal Pads
VIA to ground plane
Crystal Pad Crystal Pad
Guard ring on signal plane
X1
X2 Local ground plane beneath signal plane or on other side of pcb
VIA to ground plane
RSTZ
NC X2
X1 NC
Local ground plane beneath signal plane or on other side of pcb
TSSOP
TQFN
Typical Operating Circuit
VCC R1 VCC R2 R1, R2 4.7k VCC LED RL
RP Piezo Beeper
RP
MOSI MISO SCK
C
PX.1 PX.0 INT RST GND
Manual Reset
PIO0-7 SI PIO8 SO SCK CSZ PIO9-11 DS28DG02 WPZ
Push Buttons
32KHz 12.5pF load, ESR 45k
WDI WDOZ ALMZ RSTZ GND
X1 X2 VBAT
3V
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DS28DG02: 2kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Pin Configurations
RSTZ N.C. N.C.
X1 X2 RSTZ WDI WDOZ WPZ PIO0 PIO4 PIO8 GND PIO10 PIO6 PIO2 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VBAT CSZ SCK SI SO ALMZ PIO1 PIO5 PIO9 GND PIO11 PIO7 PIO3 VCC
36 N.C. 1 WDI 2 WDOZ 3 WPZ 4 PIO0 5 PIO4 6 PIO8 7 N.C. 8 GND 9 10 PIO10
35
34
33
32
VBAT
X2
X1
31
30
29
SCK 28 27 N.C. 26 SI 25 SO 24 ALMZ 23 PIO1 22 PIO5 21 PIO9 20 N.C. 19 GND 18 PIO11
CSZ 16 PIO3
11 PIO6
12 PIO2
13 VCC
14 N.C.
15 VCC
4.4mm 28-Lead TSSOP (Top View) Package Outline Drawing 21-0108
Thin 36-Lead 6mm x 6mm QFN (Top View) Package Outline Drawing 21-0141
PACKAGE INFORMATION
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to www.maxim-ic.com/DallasPackInfo.)
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PIO7
N.C. 17
DS28DG02
28DG02

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